Chemical Vapor Deposition of Tungsten and Tungsten Silicides by John E.J. Schmitz PDF

By John E.J. Schmitz

ISBN-10: 0815512880

ISBN-13: 9780815512882

ISBN-10: 0815516401

ISBN-13: 9780815516408

This monograph condenses the suitable and pertinent literature on blanket and selective CVD of tungsten (W) right into a unmarried doable quantity. The e-book provides the reader with the mandatory historical past to raise, positive music, and effectively keep a CVD-W strategy in a creation set-up. fabrics deposition chemistry, gear, approach expertise, advancements, and purposes are defined.

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Additional resources for Chemical Vapor Deposition of Tungsten and Tungsten Silicides for VLSI/ ULSI Applications

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52 confirmed these results and expanded the pressure range up to 80 Torr. By going to higher pressures one other advantage appears, namely, the roughness of the film decreases. 11). 12) can be much smaller. See chapter V for more details about film roughness. Is there an upper limit for the pressure with respect to the step coverage? The answer depends on what approach is taken. McInerney et. al. 13). At low pressure the step coverage is not optimal because the WF6 pressure at the contact inlet is not high enough to prevent the WF6 "zero" pressure condition in the contact during late growth stages.

Here we will only discuss the most frequently used ones: SiH4/WF6 and H 2/WF6. In these chemistries silane and hydrogen act as reducing agents for the tungsten source, respectively. 4. Definition of the step coverage in this book. The side wall thickness b is measured at half depth of the trench or the contact. 3) but has been experimentally proven to be correct [Yu et a1. Z9, Sivaram et a1. 30) (see also chapter VI). , slow in 20 The blanket tungsten approach comparison with the SiH4 reduction.

From McInerney et al. 5 cm2/sec (= Knudsen diff. 14. Example of high aspect ratio trenches filled with evn·W under atmospheric conditions. [SEM courtesy of L. Bartholomew, Watkins Johnson Company, adapted from ref 54]. 25. Indeed for this deposition, good step coverage is found [Schmitz et a1. 31 J. In fact one needs to repeat the calculation for several stages of the fill process. 10). One should bear in mind that a small Thiele modulus does not always ensures good step coverage. This also depends on the reactor mode ie.

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Chemical Vapor Deposition of Tungsten and Tungsten Silicides for VLSI/ ULSI Applications by John E.J. Schmitz


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